S. J. Pearton
Pennsylvania State University
Public scientific profile · Unclaimed
Built from public scholarly sources. Expertise is inferred by ScienceWe from publications and has not been confirmed by the scientist.
Top expertise
Ga2O3 and related materials
Strong evidence · 7 supporting papers · latest 2026
GaN-based semiconductor devices and materials
Strong evidence · 8 supporting papers · latest 2026
Radiation Effects in Electronics
Strong evidence · 4 supporting papers · latest 2026
Diamond and Carbon-based Materials Research
Strong evidence · 1 supporting paper · latest 2026
Silicon Carbide Semiconductor Technologies
Solid evidence · 2 supporting papers · latest 2026
Advanced Photocatalysis Techniques
Solid evidence · 3 supporting papers · latest 2026
Photocathodes and Microchannel Plates
Solid evidence · 3 supporting papers · latest 2026
Semiconductor materials and devices
Solid evidence · 2 supporting papers · latest 2026
Publications (15)
Zero-bias photo-induced charge separation using built-in electric field at p-NiO/n-Ga2O3 heterojunction interface
2025DOI
Photoelectrochemical Etching of Sn‐Doped (−201) and (001) β‐Ga 2 O 3 in a NaOH Solution
2026DOI
Effect of Schottky Metal Contacts on Barrier Heights of Vertical p-type Diamond Rectifiers, with an ITO/Diamond Heterojunction Benchmark
2026DOI
Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga 2 O 3
2025DOIPMID 41474045
Pulsed-laser single-event effects study of AlN Schottky barrier diodes
2026DOI
Al composition dependence of band alignment in NiO/(AlxGa1−x)2O3 heterojunctions
2025DOI
Electron Beam Induced Current Studies of Defects Generated by Soft Breakdown of Ga 2 O 3 Schottky Diodes
2026DOI
Band Alignment of Cr 2 MnO 4 on (-201) and (001) β-Ga 2 O 3
2025DOI
Mitigating sidewall damage effects in GaN-based multi-quantum-well micro-LEDs prepared by top–down fabrication
2026DOI
Single event effect sensitivity of GaN devices with femtosecond pulsed laser probing
2026DOI
Resilience via Recovery: Gamma-Irradiated Cascode GaN HEMTs Under Electron Wind Force
2025DOI
Cold annealing of gamma irradiated high-voltage SiC MOSFETs
2026DOI
Room-temperature electrical processing of aluminum nitride heterojunction diodes
2026DOI
Micro-LEDs and nanorod-LEDs: Recent advances in fabrication, surface passivation, and plasmonic enhancement
2026DOI
(Invited) Electron Wind Force Effects on Defects in Wide Bandgap Electronics
2025DOI
Organizations in sourced records
Affiliation evidence only — not confirmed current employment.
- Pennsylvania State University
Source: OpenAlex · retrieved 2026-09-29